MSKSEMI DTC114YE-MS

MSKSEMI · Transistors (BJTs) · MPN DTC114YE-MS

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain140
Pd - Power Dissipation150mW
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 150mW Surface Mount SOT-523

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