MSKSEMI BSC097N06NS-MS

MSKSEMI · FETs & Power MOSFETs · MPN BSC097N06NS-MS

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Specifications

Output Capacitance(Coss)370pF
Pd - Power Dissipation89W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)19nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF

Technical details

89W 60V 1.6V 8mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS

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