MSKSEMI AOTL66912-MS

MSKSEMI · FETs & Power MOSFETs · MPN AOTL66912-MS

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Specifications

Output Capacitance(Coss)2.12nF
Pd - Power Dissipation390.6W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)250nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)1.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)14.3nF

Technical details

390.6W 100V 3V 1.4mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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