MSKSEMI AONR36366-MS

MSKSEMI · FETs & Power MOSFETs · MPN AONR36366-MS

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Specifications

Output Capacitance(Coss)400pF
Pd - Power Dissipation62.5W
Configuration-
Gate Charge(Qg)31.6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)315pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.075nF

Technical details

P-Channel 30V 100A 62.5W Surface Mount DFN3x3-8L

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