MSKSEMI AON6576-MS

MSKSEMI · FETs & Power MOSFETs · MPN AON6576-MS

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Specifications

Output Capacitance(Coss)498pF
Pd - Power Dissipation30W
Configuration-
Gate Charge(Qg)8nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)814pF

Technical details

30W 30V 1.2V 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS

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