MSKSEMI AON6407-MS

MSKSEMI · FETs & Power MOSFETs · MPN AON6407-MS

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.45nF
TypeP-Channel

Technical details

P-Channel 30V 100A 120W Surface Mount DFN5x6-8L

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