MSKSEMI AON3611-MS

MSKSEMI · FETs & Power MOSFETs · MPN AON3611-MS

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Specifications

Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation10.8W
RDS(on)30mΩ@10V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 16A 10.8W Surface Mount DFN3x3-8L

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