MSKSEMI AON3419-MS

MSKSEMI · FETs & Power MOSFETs · MPN AON3419-MS

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Specifications

Gate Charge(Qg)-
ConfigurationFull-Bridge
Drain to Source Voltage30V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.57W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)18mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-

Technical details

P-Channel 30V 32A 3.57W Surface Mount DFN3x3-8L

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