MSKSEMI AOD609-MS

MSKSEMI · FETs & Power MOSFETs · MPN AOD609-MS

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Specifications

Gate Charge(Qg)5.2nC@4.5V
ConfigurationHalf-Bridge;Full-Bridge
Drain to Source Voltage40V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)30mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)420pF

Technical details

N-Channel+P-Channel Array 40V 30A 30W Surface Mount TO-252-4

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