MSKSEMI AOD607-MS

MSKSEMI · FETs & Power MOSFETs · MPN AOD607-MS

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Specifications

Gate Charge(Qg)8nC@4.5V
ConfigurationHalf-Bridge;Full-Bridge
Drain to Source Voltage30V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation32.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)68mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 16A 32.5W Surface Mount TO-252-4

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