MSKSEMI AOD603A-MS

MSKSEMI · FETs & Power MOSFETs · MPN AOD603A-MS

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Specifications

Gate Charge(Qg)16.6nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.18nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 13A 20W Surface Mount TO-252-4L

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