MSKSEMI AO3413

MSKSEMI · FETs & Power MOSFETs · MPN AO3413

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Specifications

Gate Charge(Qg)4.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)60mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)550pF

Technical details

P-Channel 20V 3A 1.56W Surface Mount SOT-23-3L

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