MSKSEMI AO3409

MSKSEMI · FETs & Power MOSFETs · MPN AO3409

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Specifications

Gate Charge(Qg)2.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)75mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)226pF

Technical details

P-Channel 30V 3A 1.56W Surface Mount SOT-23-3L

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