MSKSEMI 5N10T-MS

MSKSEMI · FETs & Power MOSFETs · MPN 5N10T-MS

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)206pF

Technical details

100V 5A Surface Mount SOT-89

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