MSKSEMI 3N10-MS

MSKSEMI · FETs & Power MOSFETs · MPN 3N10-MS

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)90mΩ@10V;120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)765pF
TypeN-Channel

Technical details

N-Channel 100V 3A 1W Surface Mount SOT-23

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