MSKSEMI 3N06-MS

MSKSEMI · FETs & Power MOSFETs · MPN 3N06-MS

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)19.5pF
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)247pF
TypeN-Channel

Technical details

N-Channel 60V 3A 0.35W Surface Mount SOT-89

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