MSKSEMI · Transistors (BJTs) · MPN 2SD1164 DAR
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| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 32V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 180 |
| Pd - Power Dissipation | 500mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 400mV |
Bipolar (BJT) Transistor NPN 32V 1A 500mW Surface Mount SOT-89