MSKSEMI 2SA1015

MSKSEMI · Transistors (BJTs) · MPN 2SA1015

No reviews yet — be the first to review MSKSEMI 2SA1015.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Number1 PNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 200mW Surface Mount SOT-23

Related Transistors (BJTs)