MSKSEMI 2N7002ET1G-MS

MSKSEMI · FETs & Power MOSFETs · MPN 2N7002ET1G-MS

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)38pF

Technical details

N-Channel 60V 0.3A 0.35W Surface Mount SOT-23

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