MSKSEMI 2N7002DW

MSKSEMI · FETs & Power MOSFETs · MPN 2N7002DW

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Specifications

Gate Charge(Qg)1.1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)5.5pF
Current - Continuous Drain(Id)300mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation280mW
RDS(on)1.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)30.6pF

Technical details

N-Channel Array 60V 300mA 280mW Surface Mount SOT-363

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