MOT MOT4N65BD

MOT · FETs & Power MOSFETs · MPN MOT4N65BD

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Specifications

Output Capacitance(Coss)36pF
Pd - Power Dissipation50W
Configuration-
Drain to Source Voltage650V
Gate Charge(Qg)12.5nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.9V
RDS(on)2.9Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3.5pF
Number1 N-channel
Input Capacitance(Ciss)438pF

Technical details

50W 650V 2.9V 2.9Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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