MOT · FETs & Power MOSFETs · MPN MOT4N65BD
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| Output Capacitance(Coss) | 36pF |
|---|---|
| Pd - Power Dissipation | 50W |
| Configuration | - |
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 12.5nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| RDS(on) | 2.9Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 438pF |
50W 650V 2.9V 2.9Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS