MOT MOT10N65F

MOT · FETs & Power MOSFETs · MPN MOT10N65F

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Specifications

Gate Charge(Qg)44nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.57nF

Technical details

N-Channel 650V 10A 50W Through Hole TO-220F

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