Minos P50N20-MNS

Minos · FETs & Power MOSFETs · MPN P50N20-MNS

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)154nC
Output Capacitance(Coss)355pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)52mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 200V 50A 104W Through Hole TO-220

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