Minos MPT65N08

Minos · FETs & Power MOSFETs · MPN MPT65N08

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Specifications

Gate Charge(Qg)64nC@40V
Drain to Source Voltage85V
Current - Continuous Drain(Id)118A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation156.2W
Reverse Transfer Capacitance (Crss@Vds)13.5pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.217nF
TypeN-Channel

Technical details

N-Channel 85V 118A 156.2W Through Hole TO-220

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