Minos MPT120N10S

Minos · FETs & Power MOSFETs · MPN MPT120N10S

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Specifications

Gate Charge(Qg)74nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)878pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation173.6W
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)75pF
Number1 N-channel
Input Capacitance(Ciss)5nF
TypeN-Channel

Technical details

100V 120A 4V 173.6W 4.6mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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