Minos MPT04N10P

Minos · FETs & Power MOSFETs · MPN MPT04N10P

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Specifications

Gate Charge(Qg)114nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.594nF
Current - Continuous Drain(Id)172A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.6nF
TypeN-Channel

Technical details

100V 172A 3V 208W 3.3mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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