Minos MPT042N10S

Minos · FETs & Power MOSFETs · MPN MPT042N10S

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Specifications

Gate Charge(Qg)102nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation227.2W
Reverse Transfer Capacitance (Crss@Vds)174pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.102nF

Technical details

N-Channel 100V 120A 227.2W Surface Mount TO-263

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