Minos MPT028N10

Minos · FETs & Power MOSFETs · MPN MPT028N10

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Specifications

Gate Charge(Qg)131nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.2nF

Technical details

N-Channel 100V 180A 250W Through Hole TO-220

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