Minos MPT016N10-T

Minos · FETs & Power MOSFETs · MPN MPT016N10-T

No reviews yet — be the first to review Minos MPT016N10-T.

Specifications

Output Capacitance(Coss)1.4nF
Pd - Power Dissipation360W
Configuration-
Gate Charge(Qg)165nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.3nF

Technical details

360W 100V 3V 1.3mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs