Minos MPG55N06

Minos · FETs & Power MOSFETs · MPN MPG55N06

No reviews yet — be the first to review Minos MPG55N06.

Specifications

Gate Charge(Qg)58nC@25V
Drain to Source Voltage60V
Current - Continuous Drain(Id)55A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.2nF

Technical details

N-Channel 60V 55A 100W Through Hole TO-220

Related FETs & Power MOSFETs