Minos MPG190N04P

Minos · FETs & Power MOSFETs · MPN MPG190N04P

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)190A
Output Capacitance(Coss)1.95nF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation242W
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)7.5nF
TypeN-Channel

Technical details

40V 190A 3V 242W 3.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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