Minos MPG150N10P

Minos · FETs & Power MOSFETs · MPN MPG150N10P

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Specifications

Gate Charge(Qg)108nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation211W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)6.6nF

Technical details

N-Channel 100V 330A 211W Through Hole TO-220

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