Minos MPG100N08

Minos · FETs & Power MOSFETs · MPN MPG100N08

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Specifications

Gate Charge(Qg)119nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation117W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.533nF

Technical details

N-Channel 80V 100A 117W Through Hole TO-220

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