Minos MPG08N68P

Minos · FETs & Power MOSFETs · MPN MPG08N68P

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF

Technical details

N-Channel 68V 125W Through Hole TO-220

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