Minos MPF8N65

Minos · FETs & Power MOSFETs · MPN MPF8N65

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Specifications

Gate Charge(Qg)22nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)870pF
TypeN-Channel

Technical details

N-Channel 650V 8A 35W Through Hole TO-220F

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