Minos MPF10N65

Minos · FETs & Power MOSFETs · MPN MPF10N65

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)106pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.11nF
TypeN-Channel

Technical details

N-Channel 650V 10A Through Hole TO-220F

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