Minos MP52N20

Minos · FETs & Power MOSFETs · MPN MP52N20

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)154nC
Current - Continuous Drain(Id)52A
Output Capacitance(Coss)355pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

200V 52A 4V 104W 47mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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