Minos MP11P20

Minos · FETs & Power MOSFETs · MPN MP11P20

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)420mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

N-Channel 200V 11A Through Hole TO-220

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