Minos · FETs & Power MOSFETs · MPN MLS65R580P
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8.6nC@10V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 500mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 410.8pF |
N-Channel 650V 8A 26W Through Hole TO-220F