Minos MLS65R190W

Minos · FETs & Power MOSFETs · MPN MLS65R190W

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)38nC
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)20A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation43W
RDS(on)230mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.7pF
Number1 N-channel
Input Capacitance(Ciss)1.197nF
TypeN-Channel

Technical details

N-Channel 650V 20A 43W Through Hole TO-247

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