Minos MJE3055T

Minos · Transistors (BJTs) · MPN MJE3055T

4.0/5 from 1 engineer review.

Specifications

Current - Collector Cutoff700uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation65W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 65W Through Hole TO-220

Reviews

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