Minos MDT9N20

Minos · FETs & Power MOSFETs · MPN MDT9N20

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF

Technical details

N-Channel 200V 9A 75W Surface Mount TO-252

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