Minos MDT7N65

Minos · FETs & Power MOSFETs · MPN MDT7N65

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Specifications

Configuration-
Gate Charge(Qg)37nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 650V 7A 48W Surface Mount TO-252

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