Minos MDT40P10D

Minos · FETs & Power MOSFETs · MPN MDT40P10D

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Specifications

Configuration-
Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
RDS(on)32mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 P-Channel
Input Capacitance(Ciss)2.315nF
TypeP-Channel

Technical details

P-Channel 100V 40A 180W Surface Mount TO-252

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