Minos · FETs & Power MOSFETs · MPN MDT35P10D
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 110V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.315nF |
P-Channel 35A 180W Surface Mount TO252