Minos MDT30P10D

Minos · FETs & Power MOSFETs · MPN MDT30P10D

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage110V
Output Capacitance(Coss)190pF
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)26mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.315nF
TypeP-Channel

Technical details

P-Channel 110V 30A 180W Surface Mount TO252

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