Minos MDT30N10

Minos · FETs & Power MOSFETs · MPN MDT30N10

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Specifications

Configuration-
Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF

Technical details

N-Channel 100V 30A 70W Surface Mount TO-252

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