Minos · FETs & Power MOSFETs · MPN MDT2N60
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| Gate Charge(Qg) | 5.7nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 4.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
N-Channel 600V 2A 34W Surface Mount TO-252