Minos MDT20P10D

Minos · FETs & Power MOSFETs · MPN MDT20P10D

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)20A
Output Capacitance(Coss)81pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)70mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.36nF
TypeP-Channel

Technical details

100V 20A 1.7V 72W 70mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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