Minos MDT19N10L

Minos · FETs & Power MOSFETs · MPN MDT19N10L

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation31W
RDS(on)115mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)85pF
Number1 N-channel
Input Capacitance(Ciss)680pF
TypeN-Channel

Technical details

N-Channel 100V 19A 31W Surface Mount TO-252

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